Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure

Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector

Study of fluorine bombardment on the electrical properties of AlGaN/GaN heterostructures

The effects of fluorine ion bombardment on the channel transport properties of AlGaN /GaN heterostructures have been investigated. Ion bombardment of the heterostructure was carried out within a CF4 plasma in a reactive ion etching system at various self-bias voltages. Hall mobility and sheet electron concentration for the two-dimensional electron gas showed strong dependence on bombardment dur...

Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization

We propose and demonstrate a two dimensional/three dimensional hybrid channel AlGaN/GaN high electron mobility transistor (HEMT) structure with a flat transconductance profile using polarization-induced channel engineering. A quasi three dimensional electron gas profile with 5–6 nm of vertical channel depth was formed by grading the channel region linearly from GaN to Al0.15Ga0.85 N over 50 Å. ...

Room-Temperature mobility above 2200 cm2/Vs of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

Characterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs

The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...